Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature

Iikawa, F.; Brasil, M. J. S. P.; Couto, O. D. D.; Adriano, C.; Giles, C.; Däweritz, L.
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2250
Academic Journal
The phase-transition temperature of MnAs epitaxial films grown by molecular-beam epitaxy on GaAs(001) with different crystalline accommodations was studied by specular and grazing incidence x-ray diffraction. The transition temperature of MnAs films with tilted hexagonal c-axis orientations with respect to the GaAs substrate is higher than the most investigated nontilted films and reaches a value above room temperature, which is more suitable for device applications.


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