Strong luminescence from dislocation-free GaN nanopillars

Inoue, Y.; Hoshino, T.; Takeda, S.; Ishino, K.; Ishida, A.; Fujiyasu, H.; Kominami, H.; Mimura, H.; Nakanishi, Y.; Sakakibara, S.
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2340
Academic Journal
GaN nanostructures were prepared on Si(111) by a hot-wall epitaxy technique employing the modified two-step growth method. Isolated hexagonal pillar-like GaN nanostructures (GaN nanopillars) with the typical diameter, height, and density of 200–300 nm, 0.5–1 μm, and 3–4 × 108 cm-2, respectively, are self-organized without intentional pre-processing to the Si substrate. The photoluminescence and cathodoluminescence (CL) measurements show the strong near-band-edge emissions without the yellow band at room temperature. Stronger CL is obtained from the GaN nanopillars in comparison to single-crystalline GaN. The obtained strong CL is related to high crystal quality of the dislocation-free GaN nanopillars.


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