Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

Shui-Jinn Wang; Chao-Hsuing Chen; Shu-Cheng Chang; Kai-Ming Uang; Chuan-Ping Juan; Huang-Chung Cheng
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2358
Academic Journal
In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250–260 μm-2 and length/diameter in the range of 0.2–0.3 μm/13–15 nm were obtained from the 700°C-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7 V/μm. The self-catalytic growth of W2C nanowires is attributed to the formation of α-W2C phase caused by carbon depletion in the WCx films during thermal annealing.


Related Articles

  • Film stress of sputtered W/C multilayers and strain relaxation upon annealing. Geisz, J. F.; Kuech, T. F.; Lagally, M. G.; Cardone, F.; Potemski, R. M. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1530 

    Presents a study which performed sensitive curvature measurements on sputtered tungsten/carbon multilayer structures on silicon substrates. Measurement of compressive stress of these sputtered multilayer films; Analysis of strain relaxation behavior upon annealing; Experimental details.

  • Low pressure oxygen annealing at high temperature for high quality sputtered YBa[sub 2]Cu[sub 3]O[sub 7-δ] films. Zhai, H. Y.; Zhai, H.Y.; Chu, W. K.; Chu, W.K. // Applied Physics Letters;6/12/2000, Vol. 76 Issue 24 

    We present an improvement in the procedure for fabricating YBa[sub 2]Cu[sub 3]O[sub 7-δ] (YBCO) films by dc sputtering. An in situ anneal was used: (i) between as-deposition temperature T[sub s] and 650 °C, 10 min annealing with oxygen pressure less than 20 Torr and (ii) cooling to room...

  • A Study of Difference in Reflow Characteristics Between Electroplated and Sputtered Cu in a Dual-Damascene Fabrication Process for Silicon Semiconductor Devices. Onishi, Takashi; Mizuno, Masao; Fujikawa, Takao; Yoshikawa, Tetsuya; Munemasa, Jun; Mizuno, Masataka; Kihara, Teruo; Araki, Hideki; Shirai, Yasuharu // Journal of Electronic Materials;Jun2011, Vol. 40 Issue 6, p1384 

    The difference in reflow characteristics between electroplated and sputtered Cu films during high-temperature high-pressure treatment was confirmed, and the basis for this difference was analyzed. Using test element groups containing a number of via holes, it was found that electroplated Cu...

  • Raman spectroscopy and field-emission properties of CVD-grown carbon-nanotube films. Sveningsson, M.; Morjan, R.-E.; Nerushev, O.A.; Sato, Y.; Bäckström, J.; Campbell, E.E.B.; Rohmund, F. // Applied Physics A: Materials Science & Processing;2001, Vol. 73 Issue 4, p409 

    Carbon-nanotube films are very efficient cathodes for field-emission devices. This study presents a comprehensive comparison between structural, spectroscopic and field-emission properties of films of aligned and non-aligned multi-wall nanotubes (MWNTs) which are grown by thermal chemical vapour...

  • Structures and defects induced during annealing of sputtered near-equiatomic NiTi shape memory thin films. Gong, F. F.; Shen, H. M.; Wang, Y. N. // Applied Physics Letters;10/28/1996, Vol. 69 Issue 18, p2656 

    Structures and defects induced during annealing were studied in free-standing NiTi thin films produced by rf magnetron sputtering. Ni4Ti3 precipitates coherent with the (B2) matrix do not affect the shape memory behavior of the thin films annealed at 550 °C for short times. With the further...

  • Rapid thermal processing of sendust for magnetic recording applications. Macken, Declan; Scullion, Paul; Duddy, Kevin // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6517 

    This article describes a method of thermally processing sputter deposited 2-μm-thick sendust films to produce the high permeability form of this alloy. The method described utilizes rapid thermal processing to induce the phase change in the sendust from the disordered α type to the DO[sub...

  • Copper nanocones grown in polymer ion-track membranes as field emitters. Serbun, P.; Jordan, F.; Navitski, A.; Müller, G.; Alber, I.; Toimil-Molares, M.E.; Trautmann, C. // European Physical Journal - Applied Physics;Apr2012, Vol. 58 Issue 1, pN.PAG 

    Field emission (FE) properties of unstructured and patch-structured cathodes with randomly distributed and vertically aligned copper nanocones (Cu-NCs) are reported. The cones of ~28 μm height, 2.4 μm base diameter and 95–220 nm tip radius were fabricated by electrochemical...

  • Formation of C54 TiSi2 thin films by using high-temperature sputtering and rapid thermal annealing. Lee, S. J.; Kim, D. Y.; Kim, T. W. // Journal of Materials Science;May2004, Vol. 39 Issue 9, p3203 

    Discusses the formation of C54 titanium silicon thin films by using high-temperature sputtering and rapid thermal annealing. Lower resistivity and larger thermal stability compared to other silicide thin films; Phase transitions; X-ray diffraction measurements; X-ray fluorescence measurements;...

  • Major advance in field-emission display cathode material claim. Bush, Steve // Electronics Weekly;11/15/2006, Issue 2265, p8 

    The article reports that Quantum Filament Technology has claimed to have made significant advances with its cathode material for use in field-emission displays (FEDs). The firm's material is hydrogenated amorphous silicon, processed by excimer laser to produce emission sites both on its surface...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics