TITLE

Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

AUTHOR(S)
Shui-Jinn Wang; Chao-Hsuing Chen; Shu-Cheng Chang; Kai-Ming Uang; Chuan-Ping Juan; Huang-Chung Cheng
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2358
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250–260 μm-2 and length/diameter in the range of 0.2–0.3 μm/13–15 nm were obtained from the 700°C-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7 V/μm. The self-catalytic growth of W2C nanowires is attributed to the formation of α-W2C phase caused by carbon depletion in the WCx films during thermal annealing.
ACCESSION #
14546666

 

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