Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Dier, Oliver; Sterkel, Martin; Grau, Markus; Chun Lin; Lauer, Christian; Amann, Markus-Christian
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2388
Academic Journal
A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAssSbd and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6310-5 Ω cm2.


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