Numerical simulation of tetracene light-emitting transistors: A detailed balance of exciton processes

Verlaak, Stijn; Cheyns, David; Debucquoy, Maarten; Arkhipov, Vladimir; Heremans, Paul
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2405
Academic Journal
We assess the possibility to use an ambipolar organic light-emitting transistor structure as gain medium for an electrically pumped laser. Singlet and triplet continuity equations are solved together with Poissons and drift-diffusion equations in two dimensions. The solution allows for a detailed balance between the exciton decay, quenching and generation mechanisms. Simulations of a tetracene light-emitting transistor show that triplets are most dominant in quenching singlets. Singlet-triplet quenching can ultimately prevent pure tetracene crystals or films—when provided with a realistic optical feedback structure, to reach the threshold for stimulated emission.


Related Articles

  • Formal improvements in the solution of the wavelet-transformed Poisson and diffusion equations. Lewalle, Jacques // Journal of Mathematical Physics;Aug98, Vol. 39 Issue 8, p4119 

    Proposes several improvements in the solution of the wavelet-transformed Poisson and diffusion equations. Relationship of the Hermitian wavelet to the Laplace operator; Dependence of the wavelet transform of the solution to the wavelet transform of the source field; Simplification of the...

  • Optical-electrical simulation of organic solar cells: excitonic modeling parameter influence on electrical characteristics. Vervisch, Wilfried; Biondo, Stéphane; Rivière, Guillaume; Duché, David; Escoubas, Ludovic; Torchio, Philippe; Simon, Jean-Jacques; Le Rouzo, Judikaël // Applied Physics Letters;6/20/2011, Vol. 98 Issue 25, p253306 

    This paper deals with Organic Solar Cells (OSCs) simulation using finite element method. Optical modeling is performed via Finite Difference Time Domain method whereas the continuity and Poisson's equations are solved to obtain electrical characteristics of the OSC. In this work, simulation...

  • Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors. Bae, Byung-Seong; Lee, Choochon // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3439 

    Investigates the gate voltage dependencies of conductance activation energy of source-drain current for hydrogenated amorphous silicon (a-Si:H) thin film transistor. Solution for the Poisson equation; Model gap density of states of a-Si:H.

  • Poisson Equation on Some Complete Noncompact Manifolds. Xu Qian Fan // Acta Mathematica Sinica;Apr2007, Vol. 23 Issue 4, p623 

    We study the Poisson equation on some complete noncompact manifolds with asymptotically nonnegative curvature. We will also study the limiting behavior of the nonhomogeneous heat equation on some complete noncompact manifolds with nonnegative curvature.

  • A Single-Electron Transistor Model Based on a Numerical Solution of the Poisson Equation. Abramov, I. I.; Novik, E. G. // Technical Physics Letters;Aug2000, Vol. 26 Issue 8, p726 

    A numerical model of a single-electron metal transistor is proposed based on a solution of the Poisson equation. The model provides a good agreement with experimental data on the current-voltage characteristics obtained at nonzero temperatures in the ambient medium.

  • AlGaN-GaN-AlInGaN induced base transistor. Shur, M. S.; Shur, M.S.; Bykhovski, A. D.; Bykhovski, A.D.; Gaska, R.; Khan, M. A.; Khan, M.A.; Yang, J. W.; Yang, J.W. // Applied Physics Letters;5/29/2000, Vol. 76 Issue 22 

    We have simulated an induced base transistor based on n-type GaN-AlGaN-GaN-AlInGaN heterostructure with a thin AlGaN emitter barrier and a thin GaN quantum well base. Our simulations show that such a majority carrier device should have a high collector current density, a low base resistance, a...

  • Analysis and Two-Dimensional Modelling of the Doping Effect on the Leakage Current in Polysilicon Transistors. Bourezig, Y.; Bouabdallah, B.; Benichou, B.; Gaffiot, F. // International Review of Electrical Engineering;May/Jun2007, Vol. 2 Issue 3, p322 

    Recently, there has been a growing interest in polysilicon thin film transistors. The greatest motivation for this is their application to flat- panel displays. The propose of this work is to study the effect of the polysilicon doping on the leakage current, observed when the structure is in...

  • On a Fractional Master Equation. Thomas, Anitha // International Journal of Differential Equations;2011, p1 

    A fractional order time-independent form of the wave equation or diffusion equation in two dimensions is obtained from the standard time-independent form of the wave equation or diffusion equation in two-dimensions by replacing the integer order partial derivatives by fractional Riesz-Feller...

  • Weighted Lp Estimates for the Poisson Equation and Heat Equation. Qian Miao // Pure Mathematics;May2013, Vol. 3 Issue 3, p207 

    Lp estimates for the Poisson equation and heat equation are the most basic regularity estimates. In this paper, we mainly study a new class of regularity estimates, weighted Lp estimates, for the Poisson equation and heat equation.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics