TITLE

Numerical simulation of tetracene light-emitting transistors: A detailed balance of exciton processes

AUTHOR(S)
Verlaak, Stijn; Cheyns, David; Debucquoy, Maarten; Arkhipov, Vladimir; Heremans, Paul
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2405
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We assess the possibility to use an ambipolar organic light-emitting transistor structure as gain medium for an electrically pumped laser. Singlet and triplet continuity equations are solved together with Poissons and drift-diffusion equations in two dimensions. The solution allows for a detailed balance between the exciton decay, quenching and generation mechanisms. Simulations of a tetracene light-emitting transistor show that triplets are most dominant in quenching singlets. Singlet-triplet quenching can ultimately prevent pure tetracene crystals or films—when provided with a realistic optical feedback structure, to reach the threshold for stimulated emission.
ACCESSION #
14546651

 

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