In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures

Vairagar, A. V.; Mhaisalkar, S. G.; Krishnamoorthy, Ahila; Tu, K.N.; Gusak, A. M.; Meyer, Moritz Andreas; Zschech, Ehrenfried
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2502
Academic Journal
In situ electromigration experiments were carried out to study electromigration-induced failure in the upper and lower layers in dual-damascene Cu test structures. The observations revealed electromigration-induced void movement along the Cu/dielectric cap interface. It supports the premise that Cu/Si3N4 interface acts as the dominant electromigration path. However, the observed void nucleation occurs in the Cu/Si3N4 interface at locations which are far from the cathode, and void movement along the Cu/Si3N4 interface in opposite direction of electron flow eventually causes void agglomeration at the via in the cathode end. The different electromigration behaviors of the upper and lower layer dual-damascene structures are discussed.


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