Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

Ekins-Daukes, N. J.; Lee, H. S.; Sasaki, T.; Yamaguchi, M.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Kamiya, T.
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2511
Academic Journal
Radiation-induced majority carrier removal is investigated from n+/p- lattice-mismatched In0.56Ga0.44P solar cells under l-MeV-electron irradiation. The change in carder concentration in the 1 × 1017 cm-3p- base layer is determined using standard capacitance-voltage techniques and found to proceed at a rate Rc= 1.3 cm-1, in agreement with that observed in lattice-matched InGaP. However, the observation of an increased short-circuit current and short-wavelength quantum efficiency over the unirradiated values at electron fluence levels in excess of 3 × 1015 cm-2, allows the carder concentration from the n+ emitter layer to be measured. By modeling the quantum efficiency of these solar cells, it is shown that the main photoresponse from these lattice-mismatched solar cells is due to drift transport, making the spectral response highly sensitive to charges in the width of the depletion region. Using this technique, the carrier concentration in the 2 × 1018 cm-3 n+ emitter layer is found to be reduced to 1 × 1018 cm-3 after exposure to an electron fluence of 3 × 1015 cm-2.


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