Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Sawano, K.; Koh, S.; Shiraki, Y.; Ozawa, Y.; Hattori, T.; Yamanaka, J.; Suzuki, K.; Arimoto, K.; Nakagawa, K.; Usami, N.
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2514
Academic Journal
We fabricated high-quality strain-relaxed thin SiGe layers by Ar ion implantation into Si substrates before epitaxial growth. The surface of 100-nm-thick Si0.8Ge0.2 layers, the relaxation ratio of which was more than 80%, was found to be very smooth, with arms roughness of 0.34 nm. Cross-sectional transmission electron microscopy analysis confirmed that strain-relieving dislocations were effectively generated due to the ion-implantation-induced defects and confined in the vicinity of the heterointerface, resulting in a dislocation-free SiGe surface. Moreover, in-plane strain-field fluctuation was found to be largely reduced by this ion implantation method.


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