Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon
Related Articles
- Controlled laser heating of carbon nanotubes. Bassil, Ayman; Puech, Pascal; Tubery, Lucien; Bacsa, Wolfgang; Flahaut, Emmanuel // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p173113
We investigate laser heating of double wall carbon nanotubes deposited on surfaces and immerged in liquids as a function of laser wavelength. Observing the Raman spectrum we find that laser heating of agglomerated double wall carbon nanotubes is six times larger at 488 nm than at 647 nm. The...
- Amorphous interface layer in thin graphite films grown on the carbon face of SiC. Colby, R.; Bolen, M. L.; Capano, M. A.; Stach, E. A. // Applied Physics Letters;9/5/2011, Vol. 99 Issue 10, p101904
Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not cover the entire interface, but uniform contiguous regions...
- Silicon/Graphite/Polyaniline Nanocomposite with Improved Lithium-Storage Capacity and Cyclability as Anode Materials for Lithium-ion Batteries. Meng Chen; Chunyu Du; Long Wang; Geping Yin; Pengfei Shi // International Journal of Electrochemical Science;Jan2012, Vol. 7 Issue 1, p819
A silicon/graphite/polyaniline (Si/G/PANI) nanocomposite is facilely prepared by the in-situ chemical polymerization of aniline monomer in the presence of nano-Si and graphite powders. This composite are examined by scanning electronic microscopy, transmission electronic microscopy, Raman...
- Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG. Tomita, Takuro; Kumai, Ryota; Matsuo, Shigeki; Hashimoto, Shuichi; Yamaguchi, Makoto // Applied Physics A: Materials Science & Processing;Nov2009, Vol. 97 Issue 2, p271
The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The...
- Graphite -- not graphene -- could replace silicon transistors. Palmer, Jason // New Scientist;1/12/2008, Vol. 197 Issue 2638, p24
The article provides information regarding the alternatives to silicon transistors. The substance called graphene, which one hundred times thinner than the smallest silicon transistor, has been discovered as a promising alternative to silicon. But it tends to curl up and react with substances...
- Studies of interface structures of W films grown on patterned and bare Si(100) by TEM. Atici, Yusuf // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 3, p307
W films were grown onto patterned n[sup +] Si(100) and bare Si(100) wafers by low pressure chemical vapour deposition (LPCVD) at 230�280 �C. The films were investigated by transmission electron microscopy (TEM). The cross-sectional TEM samples of W/Si(100) exhibited a fine scale...
- Transmission electron microscopy study of chemically etched porous Si. Shih, S.; Jung, K.H.; Qian, R.-Z.; Kwong, D.L. // Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p467
Develops an approach for the examination of chemically etched (CE) porous silicon layer by transmission electron microscopy (TEM). Fabrication of the CE layer following plan-view TEM sample preparation; Existence of crystalline, polycrystalline and amorphous phases; Transition of microstructure...
- Production of ordered silicon nanocrystals by low-energy ion sputtering. Gago, Raúl; Vázquez, Luis; Cuerno, Rodolfo; Varela, María; Ballesteros, Carmen; Albella, José María // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3316
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si (100) substrate with 1.2 keV Ar[sup +] ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline,...
- Si/SiO2 interface roughness: Structural observations and electrical consequences. Carim, A. H.; Bhattacharyya, Anjan // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p872
Thin oxides (on the order of 80-90 Å) grown at 900 °C in dry O[sub 2] diluted with Ar were examined in cross section by high-resolution transmission electron microscopy. Varying degrees of roughness at the substrate/oxide interface were observed, depending on the processing sequence...