Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Fortunato, Elvira M. C.; Barquinha, Pedro M. C.; Pimentel, Ana C. M. B. G.; Gonçalves, Alexandra M. F.; Marques, Antonio J. S.; Martins, Rodrigo F. P.; Pereira, Luis M. N.
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2541
Academic Journal
We report high-perfomance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm2/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3 × 105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination o f transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.


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