TITLE

Hydrogen-induced defects and degradation in oxide ferroelectrics

AUTHOR(S)
Xiong, K.; Robertson, J.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2577
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate hydrogen-induced defects in BaTiO3, PbTiO3, PbZrO3, and strontium bismuth tantalite (SBT). We find that interstitial hydrogen produces a shallow level and OH- ions leading to loss of switchable polarization if the oxide's band gap is under about 4.2 eV, but hydrogen is deep in wide gap compounds like BaZrO3. In SBT, hydrogen is more stable in the Bi-O layer.
ACCESSION #
14546596

 

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