TITLE

Gas phase chlorination of hydrogen-passivated silicon surfaces

AUTHOR(S)
Rivillon, Sandrine; Amy, Fabrice; Chabal, Yves J.; Frank, Martin M.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2583
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A simple method is described to functionalize hydrogen-passivated Si(III) and Si(100) surfaces with chlorine (Cl2) gas. Infrared-absorption spectroscopy provides a positive identification of chlorination and mechanistic information on the chlorination of H-terminated Si surfaces, and on the structure and stability of chlorine-terminated Si surfaces (Cl/Si). We find that the chlorination process does not change the surface morphology: H/Si(III)-(1×1) surfaces and HF-etched Si(100) surfaces rennin atomically flat and atomically rough, respectively, upon chlorination. Chlorinated S: surfaces are stable in a nitrogen atmosphere for over 12 hour.
ACCESSION #
14546594

 

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