Memory characteristics of Pt nanocrystals self-assembled from reduction of an embedded PtOx ultrathin film in metal-oxide-semiconductor structures

Tseng, Jiun-Yi; Cheng, Cheng-Wei; Wang, Sheng-Yu; Wu, Tai-Bor; Hsieh, Kuang-Yeu; Liu, Rich
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2595
Academic Journal
The nonvolatile memory characteristics of metal-oxide-semiconductor structures containing Pt nanocrystals in SiO2 gate oxide were studied. The Pt nanocrystals of 2–3 nm in diarneter were self-assembled from reduction of an ultrathin PtOx layer embedded in the SiO2 by vacuum annealing at 425°C. A large hysteresis loop was found in the capacitance-voltage (C-V) relation indicating this significant memory effect. However, two different charge storage mechanisms were found for the Pt nanocrystals in devices with different tunnel oxide thickness. A counterclockwise C-V hysteresis was induced from substrate injection for the devices made with a thin tunnel oxide layer 2.5–5.0 nm thick. Contrast, a clockwise behavior attributed to the electron transfer from charged defects in the gate oxide was found for the devices having a tunnel oxide layer 7.5 nm thick. The relatively stable memory characteristics of Pt nanocrystals resulted from substrate injection were also demonstrated.


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