TITLE

Room temperature nanofabrication of atomically registered heteromolecular organosilicon nanostructures using multistep feedback controlled lithography

AUTHOR(S)
Basu, R.; Guisinger, N. P.; Greene, M. E.; Hersam, M. C.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2619
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrahigh vacuum scanning tunneling microscopy is employed for the nanofabrication and characterization of atomically registered heteromolecular organosilicon nanostructures at room temperature. In the first fabrication step, feedback controlled lithography (FCL) is used to pattern individual 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) free radical molecules at opposite ends of the same dimer row on the Si(100)-2 × 1:H surface. In atomic registration with the first pattern, FCL is subsequently applied for the removal of a single hydrogen atom. The resulting dangling bond templates the spontaneous growth of a styrene chain that is oriented along the underlying dimer row. The styrene chain growth is bounded by the originally patterned TEMPO molecules, thus resulting in a heteromolecular organosilicon nanostructure. The demonstration of multistep FCL suggests that this approach can be widely used for fundamental studies and fabricating prototype devices that require atomically registered organic molecules mounted on silicon surfaces.
ACCESSION #
14546582

 

Related Articles

  • Mediation of chain reactions by propagating radicals during halogenation of H-masked Si(100): Implications for atomic-scale lithography and processing. Ferng, Shyh-Shin; Wu, Shiao-Ting; Lin, Deng-Sung; Chiang, Tai C. // Journal of Chemical Physics;4/28/2009, Vol. 130 Issue 16, p164706 

    Scanning tunneling microscopy reveals a free radical-induced surface chain reaction in the chlorination of nanoscale patterns on an otherwise H-passivated (masked) Si(100). While scanning probe methods can be used to pattern active surface regions with single-bond precision, follow-up selective...

  • One-dimensional Schottky contact between ErSi2 nanowire and Si(001). Kubo, O.; Shingaya, Y.; Aono, M.; Nakayama, T. // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p233117 

    We have measured the electric properties of nanosized Schottky contacts formed between ErSi2 nanowires (NWs) and a Si(001) substrate. Current vs voltage (I-V) measurement was performed by touching a scanning tunneling microscope tip to the NWs. The current density (J) through the ErSi2/Si(001)...

  • Analysis of scanning tunneling microscopy feedback system. Oliva, A.I.; Anguiano, E.; Denisenko, N.; Aguilar, M.; Pena, J.L. // Review of Scientific Instruments;May95, Vol. 66 Issue 5, p3196 

    Presents a theoretical analysis of the feedback system in the scanning tunneling microscope (STM). Inclusion of all elements involved in the STM loop in the proposed model; Control system description; Feedback model; Stability study and models for the z-piezo; Most common problems during the...

  • Optimal conditions for imaging in scanning tunneling microscopy: Theory Anguiano, E.; Oliva, A.I.; Aguilar, M. // Review of Scientific Instruments;Nov98, Vol. 69 Issue 11, p3867 

    Examines the optimal conditions for imaging the scanning tunneling microscopy (STM) feedback system. Importance of feedback circuit into the loop; Main parameters used to obtain STM images; Effects of combining the stability conditions with the optimal conditions.

  • Optimal conditions for imaging in scanning tunneling microscopy: Experimental Anguiano, E.; Oliva, A.I.; Aguilar, M. // Review of Scientific Instruments;Nov98, Vol. 69 Issue 11, p3875 

    Presents the study of the behavior of surface textures imaged by scanning tunneling microscopy (STM) under different control conditions in the feedback loop. Description of the quality and reliability of STM images; Analysis of the main surface texture parameters; Role of STM technique for...

  • Nanometer scale structure fabrication with the scanning tunneling microscope. Staufer, U.; Wiesendanger, R.; Eng, L.; Rosenthaler, L.; Hidber, H. R.; Güntherodt, H.-J.; Garcia, N. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p244 

    Nanometer scale structures have been produced on atomically flat surfaces of metallic glasses using the scanning tunneling microscope in the tunneling mode with enhanced local current densities and strong electric fields. Depending on the current and the electric field enhanced diffusion, local...

  • Nanometer-scale features produced by electric-field emission. McBride, S.E.; Wetsel Jr., G.C. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p3056 

    Reports on the formation of nanometer-scale features on the metallic surfaces using a scanning tunneling microscope instrument. Composition of the instrument; Characterization of the sample surface; Range of the form of the created features.

  • Nanometer-scale imaging with an ultrafast scanning tunneling microscope. Steeves, G. M.; Elezzabi, A. Y.; Freeman, M. R. // Applied Physics Letters;1/26/1998, Vol. 72 Issue 4, p504 

    We present experimental data demonstrating the spatial resolution of an ultrafast junction mixing scanning tunneling microscope (JM-STM). The experiment uses a patterned metal-on-metal (Ti/Au) surface to establish electronic structure contrast on a short length scale. Our measurements achieve a...

  • Evidence of diffusion characteristics of field emission electrons in nanostructuring process on graphite surface. Wang, Chen; Bai, Chunli; Li, Xiaodong; Shang, Guangyi; Lee, Imshik; Wang, Xinwen; Qiu, Xiaohui; Tian, Fang // Applied Physics Letters;7/15/1996, Vol. 69 Issue 3, p348 

    The characteristics of the nanostructure on the surface of highly oriented pyrolytic graphite (HOPG) involving field emitted electrons is examined with scanning tunneling microscopy (STM). A simple model based on the continuum electron diffusion is proposed and is compared with the experimental...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics