Silicon optical nanocrystal memory

Walters, R. J.; Kik, P. G.; Casperson, J. D.; Atwater, H. A.; Lindstedt, R.; Giorgi, M.; Bourianoff, G.
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2622
Academic Journal
We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature.


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