Enhanced back reflectance and quantum efficiency in Cu(In,Ga)Se2 thin film solar cells with a ZrN back reflector

Malmström, Jonas; Schleussner, Sebastian; Stolt, Lars
September 2004
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2634
Academic Journal
A reactively sputtered ZrN reflector layer on top of the conventional Mo back contact yields enhanced absorber/back contact reflectance in Cu(In,Ga)Se2 thin film solar cells. Improved long wavelength quantum efficiency is demonstrated with a ZrN reflector at a Cu(In,Ga)Se2 thickness of 0.5 μm. The optical gain with respect to a standard Mo hack contact is initially offset by increased hack contact recombination and contact resistance, but these electronic losses can be suppressed by Ca grading of the absorber or by inclusion of a contact layer of MoSe2. This allows for a significantly improved power conversion efficiency of devices with sub-micron Cu(In,Ga)Se2 thickness.


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