TITLE

Comment on “Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]

AUTHOR(S)
Yow-Jon Lin; Chih-Kuo Tseng
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2661
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a commentary regarding Fermi level pinning on 4H-SiC using synchroton photoemission spectroscopy. Claim that the Fermi level (Ef) pinning at the surface of p-type SiC (p-sic) originated from two kinds of hole traps in p-sic; Assertion that important features of the problem are neglected; Difficulty in understanding how the surface level Fermi can be pinned by bulk-like defects.
ACCESSION #
14546568

 

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