TITLE

Response to “Comment on ‘Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy’ ” [Appl. Phys. Lett. 85, 2661 (2004)]

AUTHOR(S)
Sang Youn Han; Jong-Lam Lee
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2663
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a response to a commentary regarding the interpretation of Fermi level pinning on 4H-SiC using synchroton photoemission spectroscopy. Finding that Fermi level (Ef) pinning at the surface of p-type SiC originated from hole trap (H1); Claim that 4-A-thick Ni layer deposited on SiC was too thin to determine the barrier height; Use of a deep level transient spectroscopy measurement to obtain the depth information of the trap.
ACCESSION #
14546567

 

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