The Synthesis and Photoelectric Properties of Si–(Si2)1 – x(ZnS)x Epitaxial Structures

Sapaev, B.; Saidov, A. S.
September 2004
Technical Physics Letters;Sep2004, Vol. 30 Issue 9, p715
Academic Journal
Epitaxial layers of (Si2)1 - x(ZnS)x(0.08????x????0.92) solid solutions were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal polycrystalline silicon substrates. The morphology, photoelectric properties, and current-voltage characteristics of the epilayers have been studied. The obtained (Si2)1- x(ZnS)x layers exhibit homogeneous depth-concentration profiles of components. The photosensitivity interval extends from 1.05 to 3.0 eV, which makes the obtained structures a promising material for photo- and optoelectronic devices.


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