Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

Porta, P. A.; Summers, H. D.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1889
Academic Journal
In this letter, we describe the realization and the characterization of vertical-cavity semiconductor devices with monolithically integrated detectors for the excitation and detection of fluorescence emission from a fluorophore. These devices can act as excitation sources in forward bias and as detectors in reverse bias mode. Photonic microstructuring is used to control the optical field within the device. Detection is made possible at wavelengths longer than that of emission, with minimum attenuation of the output signal. These characteristics make these devices suitable for fluorescence spectroscopy as they are able to provide an excitation signal and detect the redshifted dye fluorescence.


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