Optical properties of InP/GaInP quantum-dot laser structures

Lewis, G. M.; Lutti, J.; Smowton, P. M.; Blood, P.; Krysa, A. B.; Liew, S. L.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1904
Academic Journal
We have grown InP quantum dots with different rates and on substrates with different orientations. The growth conditions have a major influence on the form of the gain spectrum. Using a high growth rate on a 10° off (100) substrate we obtain a broad gain spectrum due to contributions from a bimodal dot size distribution whereas a sample containing mostly small dots, produced using (211)B substrates, has a narrower gain spectrum centered at a shorter wavelength of ∼700–710 nm. The modal gain saturates at a magnitude significantly smaller than the modal absorption, nevertheless the measured values of modal gain are sufficient to sustain laser action, and structures grown at high growth rate on 10° off (100) substrates are capable of providing laser devices operating in the region of 750 nm.


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