Below band gap photoreflectance transitions in epitaxial GaN

Yu, Phil W.; Clark, Jerry D.; Look, David C.; Chen, C. Q.; Yang, Jinwei; Koutstis, Edmundas; Khan, M. Asif; Tsvertkov, Denis V.; Dmitriev, Vladimir A.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1931
Academic Journal
A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.


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