Structural evolution of dislocation half-loops in epitaxial BaTiO3 thin films during high-temperature annealing

Sun, H. P.; Pan, X. Q.; Haeni, J. H.; Schlom, D. G.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1967
Academic Journal
BaTiO3 thin films were grown on (001) SrTiO3 by reactive molecular beam epitaxy. Transmission electron microscopy studies showed that there is a high density of dislocation half-loops inside 8- and 12-nm-thick films. By thermal annealing at 1000°C, the isolated small dislocation half-loops grow and combine to form a self-assembled regular dislocation network at the film/substrate interface. Threading dislocations in the films are removed and the lattice mismatch strain in the film is nearly completely relaxed by annealing at high temperature.


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