TITLE

Structural evolution of dislocation half-loops in epitaxial BaTiO3 thin films during high-temperature annealing

AUTHOR(S)
Sun, H. P.; Pan, X. Q.; Haeni, J. H.; Schlom, D. G.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1967
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
BaTiO3 thin films were grown on (001) SrTiO3 by reactive molecular beam epitaxy. Transmission electron microscopy studies showed that there is a high density of dislocation half-loops inside 8- and 12-nm-thick films. By thermal annealing at 1000°C, the isolated small dislocation half-loops grow and combine to form a self-assembled regular dislocation network at the film/substrate interface. Threading dislocations in the films are removed and the lattice mismatch strain in the film is nearly completely relaxed by annealing at high temperature.
ACCESSION #
14434608

 

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