Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001)

Ive, Tommy; Brandt, Oliver; Kostial, Helmar; Hesjedal, Thorsten; Ramsteiner, Manfred; Ploog, Klaus H.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1970
Academic Journal
We demonstrate Si-doped n-type AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001). The structures are crack-free and have a stopband centered around 450 nm with a full width at half maximum between 40 and 50 nm. The maximum measured reflectance is >=99%. A comparison between Si-doped and undoped structures reveals no degradation of the reflectance due to the Si doping. Vertical conductance measurements at room temperature on the samples show an ohmic I–V behavior in the entire measurement range. The measured resistivity at 77 K is only a factor of 2 larger than the resistivity measured at room temperature.


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