Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

Alzanki, T.; Gwilliam, R.; Emerson, N.; Sealy, B. J.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1979
Academic Journal
A differential Hall effect technique has been developed to obtain doping profiles at a depth resolution down to 2 nm with junction depths of about 20 nm. We have determined the electrical characteristics of 5×1014 Sb+ cm-2 implanted in (100) silicon at an energy of 5 keV. A comparison was made between carrier concentration profiles and secondary ion mass spectroscopy measurements of the atomic profiles as a function of annealing temperature. We have profiled single energy implants of antimony and also double implants; the latter enables complete profiles to be measured down to the background level of about 1018 cm-3.


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