Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

Li, Jian V.; Chuang, Shun Lien; Jackson, Eric M.; Aifer, Edward
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1984
Academic Journal
We use the electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm. We use a theoretical model that includes an extended generation source and depletion region to simulate the EBIC current on both sides of the p–n junction. The electron minority diffusion length in the p-superlattice, Le, is extracted from the simulation, from which the electron lifetime τe is obtained. Le increases from 0.275 μm at 5.3 K to 0.355 μm at 100 K. τe drops from 1.5 ns at 5.3 K to 0.13 ns at 100 K.


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