Variable range hopping in a C60 field-effect transistor

Horiuchi, Kazunaga; Uchino, Shin; Hashii, Shinobu; Hashimoto, Akira; Kato, Tomohiro; Sasaki, Takahiko; Aoki, Nobuyuki; Ochiai, Yuichi
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1987
Academic Journal
A variable range hopping (VRH) has been observed in the low-temperature conductance of a C60 field-effect transistor. We have investigated a thermal annealing (TA) effect at 453 and 498 K, on the conductance in various gate voltages and several source-drain separations. VRH analysis shows that density of states in the pseudogap clearly decreases as TA temperature increases. However, there might exist the other charge trapping states at interfaces with electrodes and gate dielectric, which could be modulated also by TA.


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