Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

Nomura, Kenji; Kamiya, Toshio; Ohta, Hiromichi; Ueda, Kazushige; Hirano, Masahiro; Hosono, Hideo
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1993
Academic Journal
We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018 cm-3, logarithm of electrical conductivity decreases in proportion to T -1/4 and room-temperature Hall mobility was as low as ∼1 cm2(V s)-1. When carrier concentration was increased to 4×1018 cm-3, the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10 cm2(Vs)-1, showing metal–insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)5.


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