Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Wu, Chung-Lin; Chou, Li-Jen; Gwo, Shangjr
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2071
Academic Journal
We report the investigation of coherent GaN nanocrystals spontaneously formed by nitrogen-plasma-assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4(0001)/Si(111) surface. The distribution of grown GaN nanocrystals, as revealed by scanning electron microscopy and cross-sectional transmission electron microscopy, is very uniform in size (∼16 nm) and shape and the distribution width is significantly narrower than that of Ga droplets deposited in the Volmer–Weber mode. By using high-resolution electron microscopy, the shape and crystalline structure of the self-assembled GaN nanocrystals can be determined to be truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.


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