Defect-free InP nanowires grown in [001] direction on InP (001)

Krishnamachari, U.; Borgstrom, M.; Ohlsson, B. J.; Panev, N.; Samuelson, L.; Seifert, W.; Larsson, M. W.; Wallenberg, L. R.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2077
Academic Journal
We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates.


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