TITLE

Exciton spin relaxation dynamics in InGaAs/InP quantum wells

AUTHOR(S)
Akasaka, Shunsuke; Miyata, Shogo; Kuroda, Takamasa; Tackeuchi, Atsushi
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2083
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the exciton spin relaxation mechanism between 13 and 300 K in InGaAs/InP quantum wells using time-resolved spin-dependent pump and probe absorption measurements. The exciton spin relaxation time, τs above 40 K was found to depend on temperature, T, according to τs∝T-1.1, although the spin relaxation time is constant below 40 K. The clear carrier density dependence of the exciton spin relaxation time was observed below 40 K, although the carrier density dependence is weak above 40 K. These results imply that the main spin relaxation mechanism above and below 40 K are the D’yakonov–Perel’ process and the Bir–Aronov–Pikus process, respectively.
ACCESSION #
14434569

 

Related Articles

  • Effect of indirect interband absorption in Ge/SiGe quantum wells. Kim, Jungho; Ahn, Doyeol // Journal of Applied Physics;Oct2011, Vol. 110 Issue 8, p083119 

    The effect of the indirect interband absorption both below and above the direct gap in Ge/SiGe quantum-well (QW) structures is theoretically investigated in comparison to the direct interband absorption. The theoretical formula for the indirect interband absorption is derived based on the...

  • Spin transport dynamics of excitons in CdTe/Cd[sub 1-x]Mn[sub x]Te quantum wells. Kayanuma, Kentaro; Shirado, Eiji; Debnath, Mukul C.; Souma, Izuru; Chen, Zhanghai; Oka, Yasuo // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7278 

    Transport properties of spin-polarized excitons were studied in the double quantum well system composed of Cd[sub 0.95]Mn[sub 0.05]Te and CdTe wells. Circular polarization degrees of the time resolved exciton photoluminescence in magnetic field showed that the spin-polarized excitons diffused...

  • Study of exciton dynamics in InGaAs/InP quantum wells using a femtosecond optical parametric.... Nisoli, M.; Magni, V. // Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p227 

    Investigates the exciton dynamics in indium gallium arsenide/indium phosphide quantum wells. Use of a novel infrared tunable femtosecond laser source; Efficiency of heavy-hole excitons in the absorption saturation; Measurement of the exciton ionization time constant.

  • Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells. Sugawara, M.; Fujii, T.; Kondo, M.; Kato, K.; Domen, K.; Yamazaki, S.; Nakajima, K. // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2290 

    We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1-xGaxAsyP1-y/InP (x=0.47y) multiple quantum wells (MQW’s) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing...

  • Optical absorption in terahertz-driven quantum wells. Mi, X. W.; Cao, J. C.; Zhang, C. // Journal of Applied Physics;2/1/2004, Vol. 95 Issue 3, p1191 

    The optical absorption spectra in a quantum well driven both by an intense terahertz (THz) and by an optical pulse are theoretically investigated within the theory of density matrix. We found that the optical absorption spectra and the splitting of the excitonic peaks splitting can be controlled...

  • Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures. Burbaev, T.; Gordeev, M.; Lobanov, D.; Novikov, A.; Rzaev, M.; Sibeldin, N.; Skorikov, M.; Tsvetkov, V.; Shepel, D. // JETP Letters;Nov2010, Vol. 92 Issue 5, p305 

    The electron-hole liquid (EHL) in SiGe layers of Si/SiGe/Si quantum-confinement heterostructures is discovered. It is composed of quasi-two-dimensional holes in the quantum well formed by the SiGe layer and quasi-three-dimensional electrons, which occupy a wider region of space centered on this...

  • Quantum-coherence discovery may change communications.  // Laser Focus World;Dec2005, Vol. 41 Issue 12, p7 

    The article reports that researchers at the University of California, Santa Barbara, NASA Ames Research Center, the Georgia Institute of Technology and Georgia Tech Lorraine modulated a quantum well and discovered a quantum coherence effect that could enable optical communications. When the...

  • Entanglement Sudden Death and Sudden Birth in Semiconductor Microcavities. Abdel-Khalek, S.; Barzanjeh, S.; Eleuch, H. // International Journal of Theoretical Physics;Sep2011, Vol. 50 Issue 9, p2939 

    We explore the dynamics of the entanglement in a semiconductor cavity QED containing a quantum well. We show the presence of sudden birth and sudden death for some particular sets of the system parameters.

  • Blue-purplish InGaN quantum wells with shallow depth of exciton localization. Akasaka, Tetsuya; Gotoh, Hideki; Nakano, Hedetoshi; Makimoto, Toshiki // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191902 

    Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics