Exciton spin relaxation dynamics in InGaAs/InP quantum wells

Akasaka, Shunsuke; Miyata, Shogo; Kuroda, Takamasa; Tackeuchi, Atsushi
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2083
Academic Journal
We have investigated the exciton spin relaxation mechanism between 13 and 300 K in InGaAs/InP quantum wells using time-resolved spin-dependent pump and probe absorption measurements. The exciton spin relaxation time, τs above 40 K was found to depend on temperature, T, according to τs∝T-1.1, although the spin relaxation time is constant below 40 K. The clear carrier density dependence of the exciton spin relaxation time was observed below 40 K, although the carrier density dependence is weak above 40 K. These results imply that the main spin relaxation mechanism above and below 40 K are the D’yakonov–Perel’ process and the Bir–Aronov–Pikus process, respectively.


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