Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Yasuda, Takeshi; Goto, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2098
Academic Journal
Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5×10-4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene.


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