TITLE

Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

AUTHOR(S)
Yasuda, Takeshi; Goto, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2098
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5×10-4 cm2/Vs and field-effect electron mobility of 2.7×10-5 cm2/Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene.
ACCESSION #
14434564

 

Related Articles

  • Organic integrated complementary inverters with ink-jet printed source/drain electrodes and sub-micron channels. Gili, E.; Caironi, M.; Sirringhaus, H. // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p123303 

    We have demonstrated device operation of down-scaled n-type field effect transistors (FETs) with ink-jet printed source/drain contacts and sub-μm channel length, using the P(NDI2OD-T2) semiconducting polymer as active material. We integrated these devices with down-scaled p-type FETs made...

  • Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists. Park, Jungho; Ho, Jonathan; Yun, Hoyeol; Park, Myeongjin; Lee, Jung; Seo, Miri; Campbell, Eleanor; Lee, Changhee; Pyo, Seungmoon; Lee, Sang // Applied Physics A: Materials Science & Processing;Jun2013, Vol. 111 Issue 4, p1051 

    We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this...

  • Ambipolar organic field-effect transistors on unconventional substrates. Cosseddu, P.; Mattana, G.; Orgiu, E.; Bonfiglio, A. // Applied Physics A: Materials Science & Processing;Apr2009, Vol. 95 Issue 1, p49 

    In this paper we report on the realization of flexible all-organic ambipolar field-effect transistors (FETs) realized on unconventional substrates, such as plastic films and textile yarns. A double layer pentacene-C60 heterojunction was used as the semiconductor layer. The contacts were made...

  • Pentacene field-effect transistors with sub-10-nm channel lengths. Liang Wang; Fine, Daniel; Taeho Jung; Basu, Debarshi; von Seggern, Heinz; Dodabalapur, Ananth // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1772 

    The field effect in pentacene thin-film transistors was studied using bottom-contact devices with channel lengths below 10 nm. To suppress spreading current in these devices, which have a small channel width-to-length (W-L) ratio, we employed a pair of guarding electrodes as close as 20 nm to...

  • Control of threshold voltage of organic field-effect transistors with double-gate structures. Iba, Shingo; Sekitani, Tsuyoshi; Kato, Yusaku; Someya, Takao; Kawaguchi, Hiroshi; Takamiya, Makoto; Sakurai, Takayasu; Takagi, Shinichi // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p023509 

    We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from -16 to -43 V...

  • High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators. Byungwook Yoo; Taeho Jung; Basu, Debarshi; Dodabalapur, Ananth; Jones, Brooks A.; Facchetti, Antonio; Wasielewski, Michael R.; Marks, Tobin J. // Applied Physics Letters;2/20/2006, Vol. 88 Issue 8, p082104 

    The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n-type semiconductor N,N′-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) are described. The mobility, threshold voltage, subthreshold swing, and Ion/Ioff...

  • Transistor performance of top rough surface of pentacene measured by laminated double insulated-gate supported on a poly(dimethylsiloxanes) base structure. Mang-mang Ling; Bao, Zhenan; Dawen Li // Applied Physics Letters;1/16/2006, Vol. 88 Issue 3, p033502 

    We report the fabrication and electrical characterization of pentacene field-effect transistors with a laminated double insulated-gate using poly(dimethylsiloxanes) (PDMS) as their supporting structure. The ability of PDMS to conform to surfaces enables us to directly evaluate the device...

  • Enhanced characteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments. Sangchul Lee; Seok-Ju Kang; Gunho Jo; Minhyeok Choe; Woojin Park; Jongwon Yoon; Taehyeon Kwon; Yung Ho Kahng; Dong-Yu Kim; Byoung Hun Lee; Takhee Lee // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p083306 

    Pentacene organic field-effect transistors (OFETs) were fabricated with multilayer graphene films as the source and drain electrodes. The electrical properties of graphene electrode OFETs were monitored as the fabrication conditions were varied with surface treatments on the dielectric layer and...

  • Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer. Yanbo Jin; Rang, Zhenlin; Nathan, Marshall I.; Ruden, P. Paul; Newman, Christopher R.; Frisbie, C. Daniel // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4406 

    In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylmethacrylate) gate insulator layers were fabricated and showed good performance....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics