TITLE

Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors

AUTHOR(S)
Houssa, M.; Gendt, S. De; Autran, J. L.; Groeseneken, G.; Heyns, M. M.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact of hydrogen on negative bias temperature instability in atomic layer deposited HfO2-based hole channel field-effect transistors is investigated. After forming gas anneal of the devices at high temperature (580°C), the saturated threshold voltage shift of the transistor is about 100 mV at 125°C. The threshold voltage instability is reduced to about a factor of 2 for devices annealed in forming gas at 520°C. A detailed analysis of the experimental results suggests that the defects responsible for negative bias temperature instabilities are hydrogen-induced overcoordinated oxygen centers, due to the transport and trapping of protons in the gate dielectric stack.
ACCESSION #
14434563

 

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