High-performance diamond/amorphous silicon p-n+ heterojunctions

Chen, Y. G.; Ogura, M.; Kondo, M.; Okushi, H.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2110
Academic Journal
We have fabricated high-performance p–n+ heterojunctions of homoepitaxial diamond (B-doped film: p type) and hydrogenated amorphous silicon (P-doped a-Si:H film: n type). Current–voltage (I–V) characteristics of the p–n+ heterojunctions at room temperature show excellent rectification properties with an ideality factor n of 1.23 and undetectable leakage current at reverse bias condition. Capacitance–voltage (C–V) characteristics show a large difference of space-charge densities (net acceptor densities) in the bulk and near-surface (interface) regions of the diamond films and a strong frequency dependence in the forward-bias region. The former result indicates that the hydrogen passivation of boron in diamond during the a-Si:H deposition occurs in the near-surface region which gives rise to a reduction of the acceptor density in the depletion region. The latter result indicates an increment of hydrogen-related defect states in the near-surface region of the diamond film. An idealized energy-band diagram for the p–n+ heterojunctions has been constructed on the basis of the negative-electron-affinity model.


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