High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates

Hall, D. J.; Buckle, L.; Gordon, N. T.; Giess, J.; Hails, J. E.; Cairns, J. W.; Lawrence, R. M.; Graham, A.; Hall, R. S.; Maltby, C.; Ashley, T.
September 2004
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2113
Academic Journal
Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this material using mesa technology and flip-chip bonding. We have demonstrated excellent resistance-area product characteristics for diodes with a 10.2 μm cutoff wavelength. R0A values approaching 103 Ω cm2 at 80 K have been measured and the resistance-area product maintained above 102 Ω cm2 at 1 V reverse bias. Variable temperature R0A values correspond to expected generation-recombination loss mechanisms between 60 and 120 K. Current-voltage characteristics of two diodes at opposite sides of an array indicate that a very uniform imaging long-wavelength infrared array could be fabricated from this material.


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