TITLE

Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

AUTHOR(S)
Otsuji, Taiichi; Hanabe, Mitsuhiro; Ogawara, Osamu
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (>1012 cm-2) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8 THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory.
ACCESSION #
14434557

 

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