TITLE

Laser threshold reduction in an all-spiro guest–host system

AUTHOR(S)
Schneider, D.; Rabe, T.; Riedl, T.; Dobbertin, T.; Kröger, M.; Becker, E.; Johannes, H.-H.; Kowalsky, W.; Weimann, T.; Wang, J.; Hinze, P.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1659
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on stimulated emission in an all-spiro guest–host (G–H) system. Different doping concentrations of the guest molecule 2,2′,7,7′-tetrakis(2,2-diphenylvinyl)spiro-9,9′-bifluorene in the host material 2,7-bis(biphenyl-4-yl)-2′, 7′-di-tert-butyl-9,9′-spirobifluorene were investigated for amplified spontaneous emission (ASE) and distributed feedback (DFB) lasing. The ASE maximum could be shifted over 20 nm by variation of the doping concentration. DFB lasing is observed in the pure host, the pure guest material, and in the G–H system. The laser wavelength can be tuned from 401.5 to 529.3 nm by changing the grating period of the Bragg reflector and the doping concentration. A minimum threshold energy density of 6 μJ/cm2 was observed in second-order DFB structures for a doping concentration of 1.1%. In first-order DFB operation the threshold value could be further lowered to 320 nJ/cm2. These results render this material system an excellent candidate for stable and widely tunable lasers in the visible spectrum.
ACCESSION #
14399976

 

Related Articles

  • Photoemission study of oxygen and Au modification of doped copper phthalocyanine. Ding, Huanjun; Gao, Yongli // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043703 

    The modifications of the electronic structure of heavily Cs-doped copper phthalocyanine (CuPc) by oxygen exposure and by Au deposition have been investigated with ultraviolet and x-ray photoemission spectroscopy. To a certain degree, both oxygen and Au act like p-type dopants and compensate the...

  • Terahertz imaging using an interferometric array. Federici, John F.; Gary, Dale; Schulkin, Brian; Feng Huang; Altan, Hakan; Barat, Robert; Zimdars, David // Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2477 

    Most methods of imaging in the terahertz (THz) spectral region utilize either pulsed-laser sources or require the THz generation and detection sources to be phase coherent. The application of interferometric imaging to the THz range is described. Interferometric imaging offers considerable...

  • High-intensity bowtie VCSEL enables near-field applications. Overton, Gail // Laser Focus World;Oct2007, Vol. 43 Issue 10, p50 

    The article provides information concerning the high-intensity bowtie nanoaperture vertical-cavity surface-emitting lasers (VCSELs) in the U.S. The author says that nanoaperture VCSELs are ideal for near-field applications as optical recording and single-molecule fluorescence and spectroscopy....

  • Terahertz frequency comb by multifrequency-heterodyning photoconductive detection for high-accuracy, high-resolution terahertz spectroscopy. Yasui, Takeshi; Kabetani, Yasuhiro; Saneyoshi, Eisuke; Yokoyama, Shuko; Araki, Tsutomu // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p241104 

    We report a terahertz spectroscopy technique based on a stable terahertz frequency comb from a photoconductive terahertz emitter driven by a stabilized femtosecond laser. To this end, a photocurrent frequency comb is induced in a photoconductive terahertz detector by instantaneous photogating...

  • Doping of GaAs by laser ablated ZnTe. Ullrich, B.; Brown, G. J. // Applied Physics Letters;8/29/2011, Vol. 99 Issue 9, p091103 

    The exposure of GaAs to laser ablated ZnTe causes the formation of donor (Te)-acceptor (Zn) pair states. The photonically transferred dopants resulted in a distinct transition at 1.378 eV (FWHM ≤ 30 meV), visualized by room temperature photocurrent spectroscopy. The presence of impurity...

  • Fabrication and characterization of erbium-doped toroidal microcavity lasers. Kalkman, J.; Tchebotareva, A.; Polman, A.; Kippenberg, T. J.; Min, B.; Vahala, K. J. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p083103 

    Erbium-doped SiO2 toroidal microcavity lasers are fabricated on a Si substrate using a combination of optical lithography, etching, Er ion implantation, and CO2 laser reflow. Erbium is either preimplanted in the SiO2 base material or postimplanted into a fully fabricated microtoroid....

  • Dependence of saturation effects on electron confinement and injector doping in GaAs/Al0.45Ga0.55As quantum-cascade lasers. Höfling, S.; Jovanovic, V. D.; Indjin, D.; Reithmaier, J. P.; Forchel, A.; Ikonic, Z.; Vukmirovic, N.; Harrison, P.; Mircˇetic, A.; Milanovic, V. // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p251109 

    We report on a detailed experimental and theoretical analysis of the role of injector doping density on both the threshold current density (Jth) and the saturation current density (Jsat), determining the dynamic range of the quantum cascade lasers. The experimental results were obtained from two...

  • Second-harmonic generation in three-well and bound-to-continuum GaAs-based quantum-cascade lasers. Pflügl, C.; Austerer, M.; Golka, S.; Schrenk, W.; Andrews, A. M.; Roch, T.; Strasser, G. // Applied Physics B: Lasers & Optics;Nov2006, Vol. 11 Issue 2/3, p231 

    We present efficient second-harmonic generation in state of the art GaAs-based quantum-cascade lasers with nonlinear output powers up to 100 μW. The nonlinear output was significantly improved by applying an AlGaAs waveguide structure, which guides both, the fundamental and nonlinear light....

  • Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm: Fabrication and characterization. Casalino, M.; Sirleto, L.; Moretti, L.; Gioffrè, M.; Coppola, G.; Rendina, Ivo // Applied Physics Letters;6/23/2008, Vol. 92 Issue 25, p251104 

    In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics