Influence of overlayer thickness on the density of Lomer dislocations in nanoscale Ni–Cu bilayer thin films

Mitlin, D.; Misra, A.; Mitchell, T. E.; Hoagland, R. G.; Hirth, J. P.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1686
Academic Journal
We report on the evolution of the spacing and the character of misfit dislocations with increasing Ni overlayer thickness at an (001) Ni–Cu interface. At low Ni overlayer thicknesses (3 and 5 nm), most of the interface dislocations are 60° 1/2<110> glide dislocations, while Lomer edge dislocations constitute only about 5% of the total interface dislocation content. At a 13 nm Ni overlayer thickness, the fraction of Lomer dislocations increases to approximately 40% of the total content. This dramatic increase in the fraction of Lomer dislocations is likely related to a “rebound mechanism” which initiates at some critical thickness between 5 and 13 nm.


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