Mechanisms of nitrogen incorporation in GaAsN alloys

Reason, M.; McKay, H. A.; Ye, W.; Hanson, S.; Goldman, R. S.; Rotberg, V.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1692
Academic Journal
We have investigated nitrogen incorporation mechanisms in dilute nitride GaAsN alloys grown by plasma-assisted molecular-beam epitaxy. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry in channeling and nonchanneling conditions reveals significant composition-dependent incorporation of N into nonsubstitutional sites, presumably as either N–N or N–As split interstitials. Furthermore, we identify the (2×1) reconstruction as the surface structure which leads to the highest substitutional N incorporation, likely due to the high number of group V sites per unit area available for N–As surface exchange.


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