TITLE

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

AUTHOR(S)
Negoro, Y.; Kimoto, T.; Matsunami, H.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1716
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at 1700 °C, compared to those in an as-grown material. The Z1/2 center with an energy level of 0.59±0.03 eV and the EH6/7 center with an energy level of 1.66±0.11 eV below the conduction band edge are annealed out at a temperature of 1700 °C or higher.
ACCESSION #
14399957

 

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