Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

Negoro, Y.; Kimoto, T.; Matsunami, H.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1716
Academic Journal
N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at 1700 °C, compared to those in an as-grown material. The Z1/2 center with an energy level of 0.59±0.03 eV and the EH6/7 center with an energy level of 1.66±0.11 eV below the conduction band edge are annealed out at a temperature of 1700 °C or higher.


Related Articles

  • Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition. Johnstone, D.; Do&gcaron;an, S.; Leach, J.; Moon, Y.T.; Fu, Y.; Hu, Y.; Morkoç, H. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4058 

    Deep level transient spectroscopy was used to investigate the thermal stability of electron traps in n-type GaN grown by metalorganic chemical vapor deposition. The concentration of traps at 160 and at 500 K increased more than fivefold over the course of several 700 K anneal cycles, while a...

  • Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC. Alfieri, G.; Kimoto, T. // Journal of Applied Physics;Sep2012, Vol. 112 Issue 6, p063717 

    We report on a deep level transient spectroscopy study of Cl-implanted n- and p-type 4H-SiC epilayers. Samples were electrically characterized after each step of an isochronal annealing series, between room temperature and 1800 °C, and twelve deep traps were detected. Of these, seven traps...

  • Electronic characterization of several 100 μm thick epitaxial GaAs layers. Talbi, N.; Khirouni, K.; Sun, G. C.; Samic, H.; Bourgoin, J. C. // Journal of Materials Science: Materials in Electronics;May2008, Vol. 19 Issue 5, p487 

    Non intentionally doped thick epitaxial GaAs layers, grown by chemical vapour phase epitaxy using a high growth rate, are characterized by different electrical techniques applied on a junction (forward and reverse Current–Voltage characteristics, Current versus time and temperature, Deep...

  • Discovery of the deep level related to hydrogen in anatase TiO2. Miyagi, Takahira; Kamei, Masayuki; Mitsuhashi, Takefumi; Yamazaki, Atsushi // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p132101 

    Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase TiO2. The epitaxial anatase-TiO2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep...

  • Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage. Chikhaoui, W.; Bluet, J.-M.; Poisson, M.-A.; Sarazin, N.; Dua, C.; Bru-Chevallier, C. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072107 

    In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition on SiC substrates, temperature-dependent current-voltage measurements combined with Fourier transform current deep...

  • Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork. Xie, Jinqiao; Chevtchenko, Serguei A.; Özgür, Ümit; Morkoç, Hadis // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p262112 

    Line and point defect reductions in thin GaN epilayers with single and double in situ SiNx nanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy (DLTS), augmented by x-ray diffraction (XRD), and low temperature...

  • Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition. Ramaiah, Kodigala Subba; Bhat, I.; Chow, T. P.; Kim, J. K.; Schubert, E. F.; Johnstone, D.; Akarca-Biyikli, S. // Journal of Applied Physics;11/15/2005, Vol. 98 Issue 10, p106108 

    High-quality Schottky junctions have been fabricated on n-type 4H SiC epitaxial layers grown by chemical-vapor deposition on C- and Si-face substrates in order to understand the effect of growth direction on the growth mechanism and formation of defects. Atomic force microscopy analysis showed...

  • Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC. Alfieri, Giovanni; Kimoto, Tsunenobu // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103716 

    p-type 4H-SiC epitaxial layers grown by chemical vapor deposition have been implanted with 200 and 100 keV protons at five different implantation temperatures. An isochronal annealing series was performed from 100 to 1800 °C, and Al-doped epitaxial layers have been characterized by means of...

  • Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy. Frenzel, H.; Wenckstern, H. v.; Weber, A.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, M. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p301 

    ZnO thin films are investigated by the electrical method of deep level transient spectroscopy (DLTS) and by the optical method of Fourier transform infrared photocurrent (FTIR-PC) spectroscopy. FTIR-PC spectra show several well-resolved peaks between 100 meV and 400 meV. They include the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics