Electrical characterization of Cd/CdTe Schottky barrier diodes

Mason, Whitney; Almeida, L. A.; Kaleczyc, A. W.; Dinan, J. H.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1730
Academic Journal
We have deposited Cd metal contacts on molecular-beam epitaxy CdTe(112)B on Si(112) and have made electronic transport measurements to deduce the properties of the Schottky barrier diode thus formed. We find a room-temperature barrier height [lowercase_phi_synonym]B=0.92 eV and an ideality factor n≈2. We suggest that the high value of n is due to generation–recombination currents associated with dislocations in the CdTe epilayer.


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