Transport properties of ordered-GalnP/GaAs heterostructures

Ahrenkiel, R. K.; Metzger, W.; Friedman, D. F.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1733
Academic Journal
We have studied the transport and recombination properties of Ga0.52In0.48P/GaAs heterostructures by two transient techniques; Time-resolved photoluminescence and resonant coupled photoconductive decay. When the Ga0.52In0.48P is ordered, the two techniques produce radically different excess-carrier decay characteristics. These data can be explained by invoking a charge-separation mechanism at a type-II heterointerface. At higher excess-carrier injection levels, the charge-separation mechanism vanishes, and the type-I interface properties develop. These data are compatible with the polarization field model of ordered Ga0.52In0.48P.


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