Enhanced Curie temperature of InMnP:Zn—TC∼300 K

Yoon Shon; Jeon, H. C.; Park, Y. S.; Lee, W. C.; Seung Joo Lee; Kim, D. Y.; Kim, H. S.; Kim, H. J.; Kang, T. W.; Park, Y. J.; Chong S. Yoon; Chung, K. S.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1736
Academic Journal
P-type bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently diffused with Mn by heat treatment after the evaporation of Mn on top of InP:Zn using a molecular beam epitaxy system. The characteristics of Mn-diffused InMnP:Zn were investigated by an energy dispersive x-ray spectroscopy, photoluminescence, and a superconducting quantum interference device magnetometer measurements. The samples were characterized by transmission electron microscopy and no evidence of secondary phase formation of InMnP:Zn was found. The results of energy dispersive x-ray peak displayed injected concentration of Mn near 3%. The results of photoluminescence measurement showed that optical broad transitions related to Mn appeared around 1.2 eV and it was confirmed that the transitions around 1.2 eV were Mn-related band by the diffusion of Mn into InP:Zn. Clear ferromagnetic hysteresis loops were observed at 10 and 300 K and the temperature-dependent magnetization showed ferromagnetic behavior around 300 K, which is caused by carrier-mediated ferromagnetism in InMnP:Zn. It is found that a ferromagnetic semiconductor at room temperature can be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.


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