Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells

Malissa, H.; Jantsch, W.; Mühlberger, M.; Schäffler, F.; Wilamowski, Z.; Draxler, M.; Bauer, P.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1739
Academic Journal
We investigate the electron spin resonance of electrons in Si1-xGex quantum wells defined by SiGe barriers (19%–25%Ge). Adding small amounts of Ge changes both g-factor and linewidth and their anisotropy. We explain these effects in terms of the Bychkov–Rashba field that originates from one-sided modulation doping. The main effect arises from the increase in spin–orbit interaction with increasing x. We argue that these effects may be used to tune the g-factor of electrons in quantum dots for a selective spin manipulation.


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