Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties

Oikawa, Takahiro; Morioka, Hitoshi; Nagai, Atsushi; Funakubo, Hiroshi; Saito, Keisuke
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1754
Academic Journal
Polycrystalline Pb(Zr0.35Ti0.65)O3 [PZT] films were prepared at 540°C by metalorganic chemical vapor deposition (MOCVD). Lower leakage and lower voltage-saturated 50-nm-thick PZT films were deposited on (111)Ir/TiO2/SiO2/Si substrates than those on (111)Pt/TiO2/SiO2/Si substrates. Moreover, low leakage current and good ferroelectricity were obtained for 35-nm-thick PZT films prepared on (111)Ir/TiO2/SiO2/Si substrates by using source-gas-pulse-introduced MOCVD (pulsed-MOCVD) rather than conventional continuous gas supply MOCVD (continuous-MOCVD). As a result, 35-nm-thick PZT films with a Pr value of 47 μC/cm2 at a maximum applied voltage of 1.2 V were obtained on (111)Ir/TiO2/SiO2/Si substrates with pulsed-MOCVD. This opens the way for scaling down the film thickness of polycrystalline PZT films further while retaining good ferroelectricity.


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