Si-capping of Ge nanohuts on Si(001) analyzed by scanning tunneling microscopy and the finite element method

Goldfarb, I.; Banks-Sills, L.; Eliasi, R.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1781
Academic Journal
Ge hut nanocrystals were grown on an Si(001) surface and Si-capped by gas-source molecular-beam epitaxy. Growth and capping at 430 °C were observed in real time by scanning tunneling microscopy, and analyzed by the finite element method. Observations made here of three-dimensional Si-cap growth (in the shape of pyramids and huts) on Ge, similar to the Ge growth on Si(001), are consistent with energetic arguments based on finite elements in the framework of linear elasticity. These observations are in contrast with the higher-temperature behavior, where Si preferentially sticks to the Ge nanocrystal facets, causing them to develop large flat (001) tops and a reduced height-base ratio.


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