TITLE

Synthesis of semiconductor nanowires by annealing

AUTHOR(S)
Zhi, C. Y.; Bai, X. D.; Wang, E. G.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1802
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semiconductor nanowires, such as InAs, InP, β-Ga2O3, and GaP are synthesized by annealing semiconductor wafers covered with Au film at an appropriate temperature in the region of 550°–650°C in a N2 atmosphere. The composition of the resulting semiconductor nanowires is determined by both the substrate and the chemical conditions of growth. High-resolution transmission electron microscopy and selected area electron diffraction reveal high degrees of crystallization of the as-grown nanowires. The characteristics of the annealing method for synthesis of semiconductor nanowires are discussed.
ACCESSION #
14399928

 

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