TITLE

Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes

AUTHOR(S)
Li, Q. H.; Chen, Y. J.; Wan, Q.; Wanga, T. H.
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1805
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin film transistors are fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes. A linear correlation in the output characteristics is observed at zero gate voltage, indicating Ohmic contacts between the nanobelts and the electrodes. The transistors exhibit n-type behaviors and have a mobility of 1.85 cm2/V s with a current on/off ratio above 103. The conductance increases as the pressure in the device chamber is reduced, which indicates that the transistors are promising for oxygen detecting.
ACCESSION #
14399927

 

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