GaAs/AlGaAs nanowires capped with AlGaAs layers on GaAs(311)B substrates

Tateno, K.; Gotoh, H.; Watanabe, Y.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1808
Academic Journal
We have investigated GaAs/AlGaAs nanowires capped with AlGaAs layers for optical device applications. GaAs nanowires are not so stable during AlGaAs capping growth at high temperature. However, AlGaAs nanowires retain their shapes, and GaAs nanowires sandwiched between AlGaAs wires were capped at temperatures as high as 700°C. The capped structures showed sharp photoluminescence peaks at around 730 nm at 4 K, which originated from excitons in quantum wires. We confirmed that the AlGaAs capping layers were grown smoothly around nanowires so that surface recombination centers in GaAs nanowires were reduced compared with air-exposed GaAs wires.


Related Articles

  • Controllable Synthesis of Single-Crystalline CdO and Cd(OH)2 Nanowires by a Simple Hydrothermal Approach. Zai-xing Yang; Wei Zhong; Yan-xue Yin; Xin Du; Yu Deng; Chaktong Au; You-wei Du // Nanoscale Research Letters;Jun2010, Vol. 5 Issue 6, p961 

    Single-crystalline Cd(OH)2 or CdO nanowires can be selectively synthesized at 150 °C by a simple hydrothermal method using aqueous Cd(NO3)2 as precursor. The method is biosafe, and compared to the conventional oil-water surfactant approach, more environmental-benign. As revealed by the XRD...

  • Facile Hydrothermal Synthesis and Optical Properties of Monoclinic CePO4 Nanowires with High Aspect Ratio. Ekthammathat, Nuengruethai; Thongtem, Titipun; Phuruangrat, Anukorn; Thongtem, Somchai // Journal of Nanomaterials;2012, p1 

    One-dimensional cerium phosphate (CePO4) nanowires (NWs) were successfully synthesized by a facile and simple hydrothermal method at 200°C for 12 h, using Ce(NO3)3• 6H2O and Na3PO4• 12H2O as starting materials, and followed by pH adjusting to be 1-3 using HNO3 (conc.). Phase,...

  • Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures. Tambe, Michael J.; Lim, Sung Keun; Smith, Matthew J.; Allard, Lawrence F.; Gradecˇak, Silvija // Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151917 

    We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy...

  • Molecular conduction: Do time-dependent simulations tell you more than the Landauer approach? Sánchez, Cristián G.; Stamenova, Maria; Sanvito, Stefano; Bowler, D. R.; Horsfield, Andrew P.; Todorov, Tchavdar N. // Journal of Chemical Physics;6/7/2006, Vol. 124 Issue 21, p214708 

    A dynamical method for simulating steady-state conduction in atomic and molecular wires is presented which is both computationally and conceptually simple. The method is tested by calculating the current-voltage spectrum of a simple diatomic molecular junction, for which the static Landauer...

  • Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers. Sun, Z. Z.; Yoon, S. F.; Wu, J.; Wang, Z. G. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p5061 

    Size self-scaling effect in stacked InAs/In0.52Al0.48As nanowires on InP substrates is revealed, i.e., the base width and height of the InAs nanowires have clear proportional dependence on thickness of the InAlAs spacer layer used in different samples. The photoluminescence wavelength from...

  • Effect of antiphase boundaries on electrical transport properties of Fe3O4 nanostructures. Li, Hongliang; Wu, Yihong; Guo, Zaibing; Wang, Shijie; Teo, Kie Leong; Veres, Teodor // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252507 

    Fe3O4 nanowires have been fabricated based on Fe3O4 thin films grown on α-Al2O3 (0001) substrates using the hard mask and ion milling technique. Compared with thin films, the Fe3O4 nanowire exhibits a slightly sharper Verwey transition but pronounced anisotropic magnetoresistance properties...

  • Large scale, highly ordered assembly of nanowire parallel arrays by differential roll printing. Yerushalmi, Roie; Jacobson, Zachery A.; Ho, Johnny C.; Fan, Zhiyong; Javey, Ali // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p203104 

    A differential roll printing strategy is developed to enable large-scale and uniform assembly of highly aligned and ordered nanowire arrays on various rigid and flexible substrate materials. The dynamics of the process are explored by tuning the linear sliding motion of the roller with respect...

  • Electrical and thermal transport in single nickel nanowire. Ou, M. N.; Yang, T. J.; Harutyunyan, S. R.; Chen, Y. Y.; Chen, C. D.; Lai, S. J. // Applied Physics Letters;2/11/2008, Vol. 92 Issue 6, p063101 

    The thermal conductivity and electrical resistivity of a suspended nickel nanowire have been measured for T=15–300 K. The temperature dependence of the thermal conductivity and the Lorenz number strongly differ from the bulk. The comparison of the transports in the Ni nanowire shows, that...

  • Vertical GaP nanowires arranged at atomic steps on Si(111) substrates. Tateno, K.; Hibino, H.; Gotoh, H.; Nakano, H. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p033114 

    We report vertical GaP nanowires self-arranged in lines formed from Au islands that were initially arranged at single-layer steps on Si(111) substrates. These Au islands are spontaneously arranged by controlling the deposition. There are three aspects to the growth of vertical GaP wires: the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics