TITLE

A nonvolatile memory element based on an organic field-effect transistor

AUTHOR(S)
Unni, K. N. Narayanan; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1823
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.
ACCESSION #
14399921

 

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